Product Summary
The BSM300GA120DN2SE3256 is an IGBT Power Module.
Parametrics
BSM300GA120DN2SE3256 absolute maximum ratings: (1)Collector-emitter voltage, VCE: 1200 V; (2)Collector-gate voltage, RGE = 20 kW, VCGR: 1200V; (3)Gate-emitter voltage, VGE: ±20V; (4)DC collector current, TC = 25℃, IC: 300A; TC = 80℃, IC: 430A; (5)Pulsed collector current, tp = 1 ms, TC = 25℃, ICpuls: 600A; TC = 80℃, ICpuls: 860A; (6)Power dissipation per IGBT, TC = 25℃, Ptot: 2500W.
Features
BSM300GA120DN2SE3256 features: (1)Single switch; (2)Including fast free-wheeling diodes; (3)Package with insulated metal base plate.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
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BSM300GA120DN2SE3256 |
Infineon Technologies |
IGBT Transistors 1200V 300A SINGLE |
Data Sheet |
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Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
BSM300GA120DLC |
Infineon Technologies |
IGBT Modules 1200V 300A SINGLE |
Data Sheet |
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BSM300GA120DLCS |
Infineon Technologies |
IGBT Modules 1200V 300A SINGLE |
Data Sheet |
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BSM300GA120DLCS_B7 |
Infineon Technologies |
IGBT Modules IGBT 1200V 300A |
Data Sheet |
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BSM300GA120DN |
Other |
Data Sheet |
Negotiable |
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BSM300GA120DN2 |
Infineon Technologies |
IGBT Modules 1200V 300A SINGLE |
Data Sheet |
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BSM300GA120DN2E316 |
Other |
Data Sheet |
Negotiable |
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