(China (Mainland))
Product Summary
The BSM300GA120DN2 is an IGBT Power Module.
Parametrics
BSM300GA120DN2F absolute maximum ratings: (1)Collector-emitter voltage VCE: 1200 V; (2)Collector-gate voltage, VCGR: 1200 V; (3)Gate-emitter voltage VGE: ± 20V; (4)DC collector current, IC: 430A; (5)Pulsed collector current, tp = 1 ms, ICpuls: 860A; (6)Power dissipation per IGBT: 2500W; (7)Chip temperature Tj: + 150 ℃; (8)Storage temperature Tstg: -40 to + 125℃; (9)Thermal resistance, chip case RthJC≤ 0.05 K/W; (10)Diode thermal resistance, chip case RthJCD≤ 0.125K/W; (11)Insulation test voltage, t = 1min. Vis: 2500 Vac; (12)Creepage distance: 20 mm; (13)Clearance: 11mm; (14)DIN humidity category, DIN 40 040: F sec; (15)IEC climatic category, DIN IEC 68-1: 40 / 125 / 56sec.
Features
BSM300GA120DN2F features: (1)Single switch; (2)Including fast free-wheeling diodes; (3)Package with insulated metal base plate.
Diagrams
| Image | Part No | Mfg | Description |  |
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 BSM300GA120DN2FS |
Infineon Technologies |
IGBT Modules IGBT 1200V 300A |
Data Sheet |
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BSM300GA120DN2FS_E3256 |
Infineon Technologies |
IGBT Modules IGBT POWER MOD 1200v 300A |
Data Sheet |
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