(China (Mainland))
Product Summary
The BSM25GD120DLCE3224 is an IGBT-Module.
Parametrics
BSM25GD120DLCE3224 absolute maximum ratings: (1)Collector-emitter voltage, VCE: 1200 V; (2)DC-controller current, TC=80℃, ICNnom: 25A; TC=25℃, IC: 50A; (3)repetitive peak collector current, ICRM: 50A; (4)total power dissipation, Ptot: 200W; (5)gate-emitter peak voltage, Vges: ±20V; (6)DC forward current, IF: 25A; (7)repetitive peak forward current, IFRM: 50A; (8)I2T-Value, diode, I2T: 230A2s; (10) Diode thermal resistance, chip case, RthJCD: ≤ 1K/W; (11)Insulation test voltage, t = 1min, Vis: 2500Vac.
Features
BSM25GD120DLCE3224 features: (1)forward voltage at Tvj = 25℃, IF = 25 A, VF: 1.8 to 2.3V; (2)threshold voltage at Tvj = 25℃, V(TO): 0,8 V max; (3)slope resistance at Tvj = 150℃, rT: 10,5 mΩ max; (4)reverse current at Tvj = 150℃, VR = 1600V, IR: 2 mA typ; (5)lead resistance, terminals-chip at TC = 25℃, RAA+CC: 8 mΩ typ.
Diagrams
| Image | Part No | Mfg | Description |  |
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 BSM25GD120DLCE3224 |
Infineon Technologies |
IGBT Modules N-CH 1.2KV 50A |
Data Sheet |
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BSM200GA120D |
Other |
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Data Sheet |
Negotiable |
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BSM200GA120DLC |
Infineon Technologies |
IGBT Modules 1200V 200A SINGLE |
Data Sheet |
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BSM200GA120DLCS |
Infineon Technologies |
IGBT Modules 1200V 200A SINGLE |
Data Sheet |
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BSM200GA120DN2 |
Infineon Technologies |
IGBT Modules 1200V 200A SINGLE |
Data Sheet |
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BSM200GA120DN2C |
Infineon Technologies |
IGBT Modules IGBT 1200V 200A |
Data Sheet |
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BSM200GA120DN2F |
Infineon Technologies |
IGBT Modules IGBT 1200V 200A |
Data Sheet |
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