(China (Mainland))
Product Summary
The BSM20GP100 is an IGBT module.
Parametrics
BSM20GP100 absolute maximum ratings: (1)repetitive peak reverse voltage: 1600V; (2)RMS forward current per chip: 40A; (3)DC forward current: 20A; (4)surge forward current: 230A; (5)I2t - value: 260A2S; (6)collector-emitter voltage: 600V; (7)DC-collector current: 35A; (8)repetitive peak collector current: 40A; (9)total power dissipation: 130W; (10)gate-emitter peak voltage: ±20V.
Features
BSM20GP100 features: (1)forward voltage: 1V to 1.05V; (2)threshold voltage: 0.8V; (3)slope resistance: 10.5mΩ; (4)reverse current: 2mA; (5)lead resistance, terminals-chip:8mΩ; (6)collector-emitter saturation voltage: 2.2V; (7)gate threshold voltage: 4.5V to 6.5V; (8)input capacitance: 1.1nF; (9)collector-emitter cut-off current: 1.0mA; (10)gate-emitter leakage current: 300nA; (11)turn on delay time (inductive load): 50ns; (12)rise time (inductive load): 50ns; (13)turn off delay time (inductive load): 270ns; (14)fall time (inductive load): 40ns; (15)turn-on energy loss per pulse: 0.9mWs; (16)turn-off energy loss per pulse: 0.7mWs.
Diagrams
