Product Summary

The BSM100GB120DN2E3256 is an IGBT power module.

Parametrics

BSM100GB120DN2E3256 absolute maximum ratings: (1)Collector-emitter voltage: 1200V; (2)Collector-gate voltage, RGE = 20 kΩ: 1200V; (3)Gate-emitter voltage: ±20V; (4)DC collector current: TC = 25℃: 145A,TC = 80℃: 100A; (5)Pulsed collector current, tp = 1 ms: TC = 25℃: 290A, TC = 80℃: 200A; (6)Power dissipation per IGBT: 700W; (7)Chip temperature: +150℃; (8)Storage temperature: -40℃ to +125℃.

Features

BSM100GB120DN2E3256 features: (1)Half-bridge; (2)Including fast free-wheeling diodes; (3)Package with insulated metal base plate.

Diagrams

BSM100GB120DN2E3256 block diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
BSM100GB120DN2E3256
BSM100GB120DN2E3256
Infineon Technologies
IGBT Modules IGBT POWER MODULE
Data Sheet
0-4: $114.50
4-5: $103.04
5-10: $91.60
10-50: $82.43
Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
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Infineon Technologies
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Data Sheet
0-1: $44.53
1-10: $40.07
BSM100GAL120DN2
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Infineon Technologies
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Data Sheet
Negotiable 
BSM100GAR120DN2
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Data Sheet
Negotiable 
BSM100GB120DLC
BSM100GB120DLC
Infineon Technologies
IGBT Modules 1200V 100A DUAL
Data Sheet
0-6: $78.93
6-10: $71.03
BSM100GB120DLCK
BSM100GB120DLCK
Infineon Technologies
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Data Sheet
0-1: $49.93
1-5: $47.43
5-10: $44.93
10-50: $43.44
BSM100GB120DN2
BSM100GB120DN2
Infineon Technologies
IGBT Modules 1200V 100A DUAL
Data Sheet
0-1: $82.74
1-10: $74.47