Product Summary
The BSM100GB120DN2E3256 is an IGBT power module.
Parametrics
BSM100GB120DN2E3256 absolute maximum ratings: (1)Collector-emitter voltage: 1200V; (2)Collector-gate voltage, RGE = 20 kΩ: 1200V; (3)Gate-emitter voltage: ±20V; (4)DC collector current: TC = 25℃: 145A,TC = 80℃: 100A; (5)Pulsed collector current, tp = 1 ms: TC = 25℃: 290A, TC = 80℃: 200A; (6)Power dissipation per IGBT: 700W; (7)Chip temperature: +150℃; (8)Storage temperature: -40℃ to +125℃.
Features
BSM100GB120DN2E3256 features: (1)Half-bridge; (2)Including fast free-wheeling diodes; (3)Package with insulated metal base plate.
Diagrams
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![]() BSM100GB120DN2E3256 |
![]() Infineon Technologies |
![]() IGBT Modules IGBT POWER MODULE |
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![]() BSM100GAL120DLCK |
![]() Infineon Technologies |
![]() IGBT Modules 1200V 100A CHOPPER |
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![]() BSM100GAL120DN2 |
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![]() IGBT Modules 1200V 100A CHOPPER |
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![]() BSM100GAR120DN2 |
![]() Infineon Technologies |
![]() IGBT Transistors 1200V 100A DUAL |
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![]() BSM100GB120DLC |
![]() Infineon Technologies |
![]() IGBT Modules 1200V 100A DUAL |
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![]() BSM100GB120DLCK |
![]() Infineon Technologies |
![]() IGBT Modules 1200V 100A DUAL |
![]() Data Sheet |
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![]() BSM100GB120DN2 |
![]() Infineon Technologies |
![]() IGBT Modules 1200V 100A DUAL |
![]() Data Sheet |
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