(China (Mainland))
Product Summary
The BSM100GAL120DN2 is an IGBT Power Module.
Parametrics
BSM100GAL120DN2 absolute maximum ratings: (1)Collector-emitter voltage, VCE: 1200 V; (2)Collector-gate voltage, RGE = 20 kΩ, VCGR: 1200V; (3)Gate-emitter voltage, VGE: ± 20V; (4)DC collector current, TC = 25℃, IC: 100A; TC = 80℃, IC: 150A; (5)Pulsed collector current, tp = 1 ms, TC = 25℃, ICpuls: 200A; ; (6)TC = 80℃, ICpuls: 300A; (7)Power dissipation per IGBT, TC = 25℃, Ptot: 800W; (8)Chip temperature, Tj: +150℃; (9)Storage temperature, Tstg: -55 to +150℃.
Features
BSM100GAL120DN2 features: (1)Single switch with chopper diode; (2)Including fast free-wheeling diodes; (3)Package with insulated metal base plate.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
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 BSM100GAL120DN2 |
Infineon Technologies |
IGBT Modules 1200V 100A CHOPPER |
Data Sheet |
Negotiable |
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| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||||||||||
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BSM100GAL120DLCK |
Infineon Technologies |
IGBT Modules 1200V 100A CHOPPER |
Data Sheet |
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BSM100GAL120DN2 |
Infineon Technologies |
IGBT Modules 1200V 100A CHOPPER |
Data Sheet |
Negotiable |
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BSM100GAR120DN2 |
Infineon Technologies |
IGBT Transistors 1200V 100A DUAL |
Data Sheet |
Negotiable |
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BSM100GB120DLC |
Infineon Technologies |
IGBT Modules 1200V 100A DUAL |
Data Sheet |
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BSM100GB120DLCK |
Infineon Technologies |
IGBT Modules 1200V 100A DUAL |
Data Sheet |
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BSM100GB120DN2 |
Infineon Technologies |
IGBT Modules 1200V 100A DUAL |
Data Sheet |
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