(China (Mainland))
Product Summary
The 2MBI150NT-120 is an IGBT module.
Parametrics
2MBI150NT-120 absolute maximum ratings: (1)Collector-Emitter Voltage VCES: 1200 V; (2)Gate -Emitter Voltage VGES: ± 20 V; (3)Collector Current Continuous IC: 150 A; (4)Collector Current 1ms IC PULSE: 300 A; (5)Collector Current Continuous -IC: 150 A; (6)Collector Current 1ms -IC PULSE: 300 A; (7)Max. Power Dissipation PC: 1210 W; (8)Operating Temperature Tj: +150 ℃; (9)Storage Temperature Tstg: -40 ~ +125 ℃; (10)Isolation Voltage A.C. 1min. Vis: 2500 V.
Features
2MBI150NT-120 features: (1)High speed switching; (2)Voltage drive; (3)Low inductance module structure.
Diagrams
