Product Summary
The VN10KM is an N channel enhancement mode MOS transistor. The applications are drivers, battery operated systems, solid-state relays and inductive load drivers.
Parametrics
VN10KM absolute maximum ratings: (1)drain source voltgage, VDS: 60V; (2)gate-source votlage, VGS: 15/-0.3V; (3)pulsed drain current, IDM: 1A; (4)power dissipation, PD: 1W; (5)maximum junction to ambient, RthJA: 125℃/W; (6)operating junction and storage temperature range, Tj, Tstg: -55 to 150℃.
Features
VN10KM features: (1)zener diode input protected; (2)low on resistance; (3)ultralow threshold; (4)low input capacitance; (5)low input and output leakage.
Diagrams
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![]() VN1015 |
![]() Other |
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![]() Negotiable |
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![]() VN101501 |
![]() Cherry Electrical |
![]() Proximity Sensors MOLDED VANE |
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![]() VN101503 |
![]() Cherry Electrical |
![]() Proximity Sensors VANE W/ 6" LEADS |
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![]() VN101504 |
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![]() DIGITAL VANE SENSOR 3-PIN |
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![]() VN10-2019 |
![]() Vitelec / Emerson Connectivity Solutions |
![]() RF Connectors N Crimp Plug RG214 |
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![]() VN10-2020 |
![]() Vitelec / Emerson Connectivity Solutions |
![]() RF Connectors N Crimp Plug RG213 |
![]() Data Sheet |
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