Product Summary

The SGW25N120 is a Fast IGBT in NPT-technology.

Parametrics

SGW25N120 absolute maximum ratings: (1)Collector-emitter voltage VCE: 1200 V; (2)DC collector current, IC: 46A; (3)Pulsed collector current, tp: 84s; (4)Turn off safe operating area VCE ≤ 1200V, Tj≤ 150℃: 84A; (5)Gate-emitter voltage VGE: ±20 V; (6)Avalanche energy, single pulse, EAS: 130 mJ; (7)Short circuit withstand time, tSC: 10 μs; (8)Power dissipation, Ptot: 313 W; (9)Operating junction and storage temperature Tj,Tstg: -55 to +150℃.

Features

SGW25N120 features: (1)40% lower Eoff compared to previous generation; (2)Short circuit withstand time 10 μs; (3)Designed for: Motor controls, Inverter, SMPS; (4)NPT-Technology offers: very tight parameter distribution, high ruggedness, temperature stable behaviour, parallel switching capability.

Diagrams

SGW25N120 block diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
SGW25N120
SGW25N120
Infineon Technologies
IGBT Transistors FAST IGBT NPT TECH 1200V 25A
Data Sheet
0-1: $5.53
1-10: $4.60
10-100: $3.57
100-250: $3.37
SGW25N120E8161
SGW25N120E8161
Infineon Technologies
IGBT Transistors FAST IGBT NPT TECH 1200V 25A
Data Sheet
0-1: $3.55
1-5: $2.97
5-15: $2.67
15-30: $2.38