(China (Mainland))
Product Summary
The L88016 is a Silicon VDMOS and LDMOS transistor designed specifically for broadband RF applications. The L88016 is suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features low feedback and output capacitances resulting in high F transistors with high input impedance and high efficiency.
Parametrics
L88016 absolute maximum ratings: (1)Total Device Dissipation: 80W; (2)Junction to Case Thermal Resistance: 1.80℃/W; (3)Maximum Junction Temperature: 200℃; (4)Storage Temperature: -65 to 150℃; (5)DC Drain Current: 4.5A; (6)Drain to Source Voltage: 70V; (7)Gate to Source Voltage: 20V.
Features
L88016 features: (1)Common Source Power Gain, Gps: 14dB; (2)Drain Efficiency, η: 55%; (3)Load Mismatch Tolerance, VSWR: 20:1 Relative.
Diagrams
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 L88016 |
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| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||
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L88016 |
Other |
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Data Sheet |
Negotiable |
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L8801P |
Other |
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Data Sheet |
Negotiable |
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