(China (Mainland))
Product Summary
The K9MDG08U5M-PCB0 is a 2G x 8 Bit NAND Flash Memory. Offered in 4Gx8bit, the K9MDG08U5M-PCB0 is a 32G-bit NAND Flash Memory with spare 1G-bit. Its NAND cell provides the most costeffective solution for the solid state mass storage market. A program operation can be performed in typical 800μs on the 4,224-byte page and an erase operation can be performed in typical 1.5ms on a (512K+16K)byte block. Data in the data register can be read out at 25ns (K9MDG08U5M: 50ns) cycle time per byte. The I/O pins serve as the ports for address and data input/output as well as command input. The on-chip write controller automates all program and erase functions including pulse repetition, where required, and internal verification and margining of data. The K9MDG08U5M-PCB0 is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable applications requiring non-volatility.
Parametrics
K9MDG08U5M-PCB0 absolute maximum ratings: (1)Voltage on any pin relative to VSS VCC: -0.6 to + 4.6V; (2)VIN: -0.6 to + 4.6 V; (3)VI/O: -0.6 to Vcc+0.3 (＜4.6V); (4)Temperature Under Bias TBIAS: -10 to 125℃; (5)Storage Temperature TSTG: -65 to +150℃; (6)Short Circuit Current Ios: 5mA.
Features
K9MDG08U5M-PCB0 features: (1)Voltage Supply : 2.7 V to 3.6 V; (2)Organization: Memory Cell Array : (2G + 64M) x 8bit; (3)Data Register : (4K + 128) x 8bit; (4)Automatic Program and Erase: Page Program : (4K + 128)Byte; (5)Block Erase : (512K + 16K)Byte; (6)Page Read Operation: Page Size : (4K + 128)Byte; (7)Random Read : 60μs(Max.); (8)Serial Access : 25ns(Min.); (9)K9MDG08U5M: 50ns(Min.); (10)Memory Cell : 2bit / Memory Cell; (11)Fast Write Cycle Time; (12)Command/Address/Data Multiplexed I/O Port; (13)Hardware Data Protection; (14)Reliable CMOS Floating-Gate Technology.
Diagrams
