Product Summary
The IRG7PH42UDPBF is an insulated gate bipolar transistor with ultrafast soft recovery diode. The applications are U.P.S, Welding, Solar Inverter and Induction Heating.
Parametrics
IRG7PH42UDPBF absolute maximum ratings: (1)VCES, Collector-to-Emitter Voltage: 1200 V; (2)IC @ TC = 25℃, Continuous Collector Current: 85 A; (3)IC @ TC = 100℃, Continuous Collector Current (Silicon Limited): 45A; (4)INOMINAL Nominal Current: 30A; (5)ICM Pulse Collector Current, VGE = 15V: 90 A; (6)ILM Clamped Inductive Load Current, VGE = 20V: 120A; (7)IF @ TC = 25℃, Diode Continous Forward Current: 85A; (8)IF @ TC = 100℃, Diode Continous Forward Current: 45A; (9)IFM Diode Maximum Forward Current: 120A; (10)VGE Continuous Gate-to-Emitter Voltage: ±30 V; (11)PD @ TC = 25℃, Maximum Power Dissipation: 320 W; (12)PD @ TC = 100℃, Maximum Power Dissipation: 130W; (13)TJ, TSTG, Operating Junction and Storage Temperature Range: -55 to +150℃.
Features
IRG7PH42UDPBF features: (1)Low VCE (ON) trench IGBT technology; (2)Low switching losses; (3)Square RBSOA; (4)100% of the parts tested for ILM; (5)Positive VCE (ON) temperature co-efficient; (6)Ultra fast soft recovery co-pak diode; (7)Tight parameter distribution; (8)Lead-Free.
Diagrams
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IRG7PH42UDPBF |
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