Product Summary

The IRG7PH42UDPBF is an insulated gate bipolar transistor with ultrafast soft recovery diode. The applications are U.P.S, Welding, Solar Inverter and Induction Heating.

Parametrics

IRG7PH42UDPBF absolute maximum ratings: (1)VCES, Collector-to-Emitter Voltage: 1200 V; (2)IC @ TC = 25℃, Continuous Collector Current: 85 A; (3)IC @ TC = 100℃, Continuous Collector Current (Silicon Limited): 45A; (4)INOMINAL Nominal Current: 30A; (5)ICM Pulse Collector Current, VGE = 15V: 90 A; (6)ILM Clamped Inductive Load Current, VGE = 20V: 120A; (7)IF @ TC = 25℃, Diode Continous Forward Current: 85A; (8)IF @ TC = 100℃, Diode Continous Forward Current: 45A; (9)IFM Diode Maximum Forward Current: 120A; (10)VGE Continuous Gate-to-Emitter Voltage: ±30 V; (11)PD @ TC = 25℃, Maximum Power Dissipation: 320 W; (12)PD @ TC = 100℃, Maximum Power Dissipation: 130W; (13)TJ, TSTG, Operating Junction and Storage Temperature Range: -55 to +150℃.

Features

IRG7PH42UDPBF features: (1)Low VCE (ON) trench IGBT technology; (2)Low switching losses; (3)Square RBSOA; (4)100% of the parts tested for ILM; (5)Positive VCE (ON) temperature co-efficient; (6)Ultra fast soft recovery co-pak diode; (7)Tight parameter distribution; (8)Lead-Free.

Diagrams

IRG7PH42UDPBF block diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
IRG7PH42UDPBF
IRG7PH42UDPBF

International Rectifier

IGBT Transistors 1200V Trench IGBT Generic Ind App

Data Sheet

0-1: $6.92
1-25: $5.06
25-100: $4.01
100-250: $3.86
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(USD)
Quantity
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Data Sheet

0-1: $2.08
1-25: $1.42
25-100: $0.98
100-250: $0.97
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Data Sheet

0-1: $2.24
1-25: $1.53
25-100: $1.14
100-250: $1.09
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Data Sheet

0-1: $4.12
1-25: $3.01
25-100: $2.39
100-250: $2.29
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International Rectifier

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Data Sheet

0-1: $5.45
1-25: $3.98
25-100: $3.16
100-250: $3.04
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International Rectifier

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Data Sheet

0-1: $5.33
1-25: $3.89
25-100: $3.08
100-250: $2.96
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International Rectifier

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Data Sheet

0-1: $4.18
1-25: $3.05
25-100: $2.42
100-250: $2.33