(China (Mainland))
Product Summary
The GT60M302 is a silicon N channel MOS type insulated gate bipolar transistor. It is suitable for high power switching applications.
Parametrics
GT60M302 absolute maximum ratings: (1)collector emitter votlage, VCES: 900V; (2)gate emitter voltage, VGES: ±25V; (3)collector current, DC, IC: 60A; 1ms, ICP: 120A; (4)emitter collector forward current, DC, IECF: 15A; 1ms, ECFP: 120A; (5)collector power dissipation, PC: 200W; (6)junction temeprature, Tj: 150℃; (7)storage temeprature range, Tstg: -55 to 150℃; (8)screw torque: 0.8Nm.
Features
GT60M302 features: (1)the 3rd generation; (2)FRD included between emitter and collector; (3)enhancement-mode; (4)high speed; (5)low saturation voltage.
Diagrams
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 GT60M303(Q) |
Toshiba |
IGBT Transistors 900V/60A DIS+FRD Trench |
Data Sheet |
Negotiable |
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GT60M323(Q) |
Toshiba |
IGBT Transistors IGBT, 900V, 60A |
Data Sheet |
Negotiable |
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GT60N321(Q) |
Toshiba |
IGBT Transistors IGBT 1000V 60A |
Data Sheet |
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GT60N322(Q) |
Toshiba |
IGBT Transistors IGBT 1000V 57A |
Data Sheet |
Negotiable |
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GT60N322 |
Other |
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Data Sheet |
Negotiable |
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GT60N321 |
Other |
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Data Sheet |
Negotiable |
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