Product Summary

The G4RC20F is an insulated gate bipolar transistor.

Parametrics

G4RC20F absolute maximum raitngs: (1)VCES, collector-to-emitter breakdown votlage: 600V; (2)ICM, pulsed collector current: 44A; (3)ILM, clamped inductive load current: 44A; (4)VGE, gate-to-emitter volage: ±20V; (5)EARV, reverse voltage avalanche energy: 5.0mJ; (6)Tj, Tstg, operatting junction and strage temepature range: -55 to 150℃.

Features

G4RC20F features: (1)feast; (2)generation 4 IGBT design provides tighter parameter distribution and higher efficiency then previous generation IGBTs; (3)industry standard TO-252AA package; (4)combines very low VCE(on) with low switching losses; (5)lead free.

Diagrams

G4RC20F block diagram