(China (Mainland))
Product Summary
The FQB46N15 is an N-channel enhancement mode power field effect transistor. It is produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. The FQB46N15 is well suited for low voltage applicaitons such as audio amplifier, high efficiency switching for DC/DC converters, and DC motor control, uninterrupted power supply.
Parametrics
FQB46N15 absolute maximum ratings: (1)VDS, drain source voltage: 150V; (2)ID, drain current: 45.6A; (3)IDM, drain current: 182.4A; (4)EAS, single pulsed avalanche energy: 650mJ; (5)IAR avalanche current: 45.6A; (6)EAR, repetitive avalanche energy: 21mJ; (7)PD, power dissipation: 3.75W; (8)Tj, Tstg, operating and storage temperature range: -55 to 175℃.
Features
FQB46N15 features: (1)45.6A, 150V, RDS(on)=0.042Ω @ VGS=10V; (2)low gate charge; (3)low Crss typical 100pF; (4)fast switching; (5)100% avalanche tested; (6)improved dv/dt capability; (7)175℃ maximum junction temperature rating.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
 |
 FQB46N15TM |
Fairchild Semiconductor |
MOSFET |
Data Sheet |
Negotiable |
|
||||
|
FQB46N15TM_AM002 |
Fairchild Semiconductor |
MOSFET 150V N-Channel QFET |
Data Sheet |
Negotiable |
|
||||
