(China (Mainland))
Product Summary
The A1941 is a silicon PNP Triple Diffused Type Transistor. It is suitable for Power Amplifier Applications.
Parametrics
A1941 absolute maximum ratings: (1)Collector-base voltage, VCBO: -140 V; (2)Collector-emitter voltage, VCEO: -140 V; (3)Emitter-base voltage, VEBO: -5 V; (4)Collector current, IC: -10 A; (5)Base current, IB: -1 A; (6)Collector power dissipation (Tc = 25℃), PC: 100 W; (7)Junction temperature, Tj: 150℃; (8)Storage temperature range, Tstg: -55 to 150℃.
Features
A1941 features: (1)High breakdown voltage: VCEO = -140 V (min); (2)Complementary to 2SC5198; (3)Recommended for 70-W high-fidelity audio frequency amplifier output stage.
Diagrams
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A19408-000 |
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HX-SCE-1K-3.2-50-S1-4 |
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A1941 |
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A1943/C5200 |
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