Product Summary

The MG8Q6ES42 is a silicon N channel IGBT.

Parametrics

MG8Q6ES42 absolute maximum ratings: (1)Colleetor-Emitter Voltage VCES: 1200 V; (2)Gate-Emitter Voltage VGES: ±20 V; (3)Collector Current DC ic: 8 A; (4)Collector Current 1ms TCP: 16 A; (5)Forward Current DC If: 8 A; (6)Forward Current 1ms Ifm: 16 A; (7)Collector Power Dissipation (Tc = 25℃)PC: 80W; (8)Junction Temperature Tj: 150 ℃; (9)Storage Temperature Range Tstg: -40 to 125 ℃; (10)Isolation Voltage Vlsol: 2500 (AC 1 minute) V.

Features

MG8Q6ES42 features: (1)The Electrodes are Isolated From Case; (2)6 IGBTs are Built Into 1 Package; (3)Enhancement-Mode; (4)Low Saturation Voltage: V CE(sat)= 4.0V (Max.); (5)High Speed: tf= 0.5μs (Max.), trr=0.5μs (Max.).

Diagrams

MG8Q6ES42 block diagram