Product Summary

The MG600Q1US50A is a silicon N channel IGBT. The applications of the MG600Q1US50A include high power switching applications, motor control applications.

Parametrics

MG600Q1US50A absolute maximum ratings: (1)Collector-Emitter Voltage: 1200 V; (2)Gate-Emitter Voltage: ±20 V; (3)Collector Current: 600/1200 A; (4)Forward Current: 600 A; (5)Collector Power Dissipation (Tc = 25℃): 4100 W; (6)Junction Temperature: 150 ℃; (7)Storage Temperature Range: -40~125 ℃; (8)Isolation Voltage: 2500 (AC 1min) V; (9)Screw Torque: 3/3 N·m.

Features

MG600Q1US50A features: (1)High Input Impedance; (2)high speed: tf=0.3μs (max)@inductive load; (3)low saturation voltage: VCE(sat)=3.6 V(max); (4)Enhancement Mode; (5)Electrodes are isolated from case.

Diagrams

MG600Q1US50A block diagram