Product Summary

The MG50J6ES1 is a silicon N channel IGBT. It is suitable for high power switching applications and motor control applications.

Parametrics

MG50J6ES1 absolute maximum ratings: (1)Collector emitter voltage VCES: 1200V; (2)Gate emitter voltage VGES: ±20V; (3)Collector current DC, IC: 50A; (4)Collector current 1ms, ICP: 100A; (5)Forward current DC, IF: 50A; (6)Forward current 1ms IFM: 1000A; (7)Collector power dissipation, PC: 280W; (8)Junction temperature Tj: 150℃; (9)Storage temperature range Tstg: -40 to 125℃.

Features

MG50J6ES1 features: (1)High input impedance; (2)High speed; (3)Low saturation voltage; (4)Enhancement mode; (5)The electrodes are isolated from case.

Diagrams

MG50J6ES1 block diagram