Product Summary

The MG500Q1US11 is an IGBT module. The applications of the MG500Q1US11 are high power switching and motor control applications.

Parametrics

MG500Q1US11 absolute maximum ratings (ta = 25℃): (1)Collector-emitter voltage, VCES: 1200 V; (2)Gate-emitter voltage, VGES: ±20 V; (3)Collector current: IC: 500A at DC; ICP: 1000A at 1ms; (4)Forward current:IF: 500A at DC;IFM: 1000A at 1ms; (5)Collector power dissipation (Tc = 25℃), PC: 2400 W; (6)Junction temperature, Tj: 150 ℃; (7)Storage temperature range: -40 ~ 125 ℃; (8)Isolation voltage, VIsol: 2500(AC, 1 min) V; (9)Screw torque (Terminal : M4 / M6 / mounting):2 / 3 / 3 N.m.

Features

1MG500Q1US11 features: (1) High Input Impedane; (2) High Speed : tf=0.5/μs (Max.), trr -0.5/μs (Max.); (3) Low Saturation Voltage: vCE(sat):4.0v(Max.); (4) Enhancement-Mode; (5) The Electrodes are Isolated from Case.

Diagrams

MG500Q1US11 block diagram