MG400Q2YS60A

MG400Q2YS60A, Silicon N Channel IGBT Module, 1200V, 400A, 3750W, Toshiba Semiconductor

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Price:: US $105.00~125.00 / piece [Get Latest Price]

Reference price:

Qty (lots)	Price/lot
1 ~ 40 :	125.00 / Piece
41 ~ 50 :	115.00 / Piece
51 ~ 60 :	105.00 / Piece

PartNumber:: MG400Q2YS60A

Brand:: Toshiba Semiconductor - Toshiba | D/C:

Availability:: Supply Ability: 1000/Month Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

Quantity:: piece

Total Price:: US $0

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Products Upload time: 2013-03-28

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Part Number:MG400Q2YS60A
US $105.00 - 125.00
MG400Q2YS60A

US $82.00 - 92.00 / Piece
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Product Summary

The MG400Q2YS60A is a Silicon N Channel IGBT Module.

Parametrics

MG400Q2YS60A absolute maximum ratings: (1)Collector-emitter voltage VCES: 1200V; (2)Gate-emitter voltage VGES: ±20V; (3)Collector current DC: 400A, 1ms: 800A; (4)Forward current DC: 400A, 1ms: 800A; (5)Collector power dissipation (Tc=25℃): 3750W; (6)Control voltage (OT): 20V; (7)Control Fault input voltage: 20V; (8)Fault input current: 20mA; (9)Junction temperature: 150℃; (10)Storage temperature range: -40℃ to 125℃; (11)Operation temperature range: 20℃ to 100℃.

Features

MG400Q2YS60A features: (1)Integrates a complete half bridge power circuit and fault-signal output circuit in one package (short circuit and over temperature); (2)The electrodes are isolated from case; (3)Low thermal resistance; (4)VCE (sat) = 2.4V (typ.).