Product Summary

The MG30G1BL2 is a memory card module of Toshiba Semiconductor.

Parametrics

MG30G1BL2 absolute maximum ratings: (1)collector power dissipation (Pc): 250W; (2)collector-base voltage (Ucb): 600V; (3)collector-emitter voltage (Uce): 450V; (4)emitter-base voltage (Ueb): 6V; (5)collector current (Ic max): 30A; (6)junction temperature (Tj): 150℃.

Features

MG30G1BL2 features: (1)Collector capacitance (Cc), Pf: 250; (2)Forward current transfer ratio (hFE), min/max: 100MIN; (3)Manufacturer of MG30G1BL2 transistor: TOSHIBA; (4)Package of MG30G1BL2 transistor: X99; (5)Application of MG30G1BL2 transistor: Darlington, Power, Switching.