(China (Mainland))
Product Summary
The MG300Q1US11 is an insulated gate bipolar transistor.
Parametrics
MG300Q1US11 absolute maximum ratings: (1)Collector-emitter voltage, Vces: 1200V; (2)Gate-emitter voltage, VGES: ±20V; (3)Collector current, IC: 300A; ICP: 600A; (4)Forward current, IF: 300A; IFM: 600A; (5)Collector power dissipation, PC: 2000W; (6)Junction temperature, Tj: 150℃; (7)Storage temperature range, Tstg: -40 to 125℃; (8)Isolation voltage, Visol: 2500V.
Features
MG300Q1US11 features: (1)High input impedance; (2)High speed: tf=1.0μs, trr=0.5μs; (3)Low saturation voltage: VCE=2.7V; (4)Enhancement mode; (5)The electrodes are isolated from case.
Diagrams
