Product Summary

The MG15N6ES40 is an IGBT module.

Parametrics

MG15N6ES40 absolute maximum ratings: (1)collector-base voltage, VCBO: 1100V; (2)collector-emitter sustaining voltage, VCEX: 1100V; (3)collector-emitter sustaining voltage, VCEO: 900V; (4)emitter-base voltage, VEBO: 7V; (5)collector current: 15A; (6)forward current: 15A; (7)base current, IB: 1.5A; (8)operating and storage temperature range: -55 to +150℃; (9)power dissipation: 150W; (10)insulation test voltage: 2500Vac.

Features

MG15N6ES40 features: (1)Collector cut-off current, ICBO: 1.0mA; (2)Emitter cut-off current, IEBO: 200mA; (3)Sustaining voltage, VCEO: 900V; (4)DC current gain, hEf: 100; (5)Collector-emitter saturation voltage, VCE: 1.8 to 2.5V; (6)Base-emitter saturation voltage, VBE: 2.6 to 3.5V.

Diagrams

MG15N6ES40 block diagram