(China (Mainland))
Product Summary
The MG15N1BS1 is a transistor module.
Parametrics
MG15N1BS1 absolute maximum ratings: (1)Collector-base voltage, VCBO: 1100V; (2)Collector-emitter sustaining voltage, VCEX(SUS): 1100V; (3)Collector-emitter sustaining voltage, VCEO(SUS): 900V; (4)Emitter-base voltage, VEBO: 7V; (5)Collector current, DC, IC: 15A; 1ms, ICP: 30A; (6)Forward cuurnt: DC, IF: 15A; 1ms, IFM: 30A; (7)Base current, IB: 1.5A; (8)Collector power dissipation, PC: 150W; (9)Junction temperature, TJ: 150℃; (10)Storage temperature range, Tstg: -40 to 125℃; (11)Isolation voltage, VISOL: 2500V.
Features
MG15N1BS1 features: (1)Collector cut-off current, ICBO: 1.0mA; (2)Emitter cut-off current, IEBO: 200mA; (3)Collector-emitter sustaining voltage, VCEO(SUS): 900V; (4)DC current gain, hEF: 100V; (5)Collector-emitter saturation voltage, VCE(sat): 1.8 to 2.5V; (6)Base-emitter saturation voltage, VBE(sat): 2.6 to 3.5V; (7)Forward voltage, VF: 1.0 to 1.5V.
Diagrams
