Product Summary

The MG150J2YS40 is a Silicon N Channel IGBT module. It is designed for High Power Switching Applications, Motor Control Applications.

Parametrics

MG150J2YS40 absolute maximum ratings: (1)Collector-emitter voltage VCES: 600 V; (2)Gate-emitter voltage VGES: ±20 V; (3)Collector current DC IC: 150 A, 1ms ICP: 300 A; (4)Forward current DC IF: 150 A, 1ms IFM: 300 A; (5)Collector power dissipation (Tc = 25℃) PC: 780 W; (6)Junction temperature Tj: 150 ℃; (7)Storage temperature range Tstg: -40 ~ 125 ℃.

Features

MG150J2YS40 features: (1)The electrodes are isolated from case; (2)High input impedance; (3)Includes a complete half bridge in one package; (4)Enhancement-mode; (5)High speed: tf = 0.30μs (Max) (IC = 150A), trr = 0.15μs (Max) (IF = 150A); (6)Low saturation voltage: VCE (sat) = 2.70V (Max) (IC = 150A).

Diagrams

MG150J2YS40 block diagram