Product Summary

The MG150H1FL1 is an N-channel IGBT. The applications of the MG150H1FL1 include high power switching and motor control.

Parametrics

MG150H1FL1 absolute maximum ratings: (1)collector-emitter voltage: 1200V; (2)gate-emitter voltage: ±20V; (3)collector current, IC: 150A, ICP: 300A; (4)forward current, IF: 150A, IFM: 300A; (5)collector power dissipation: 1100W; (6)junction temperature: 150℃; (7)storage temperature range: -40℃ to +125℃; (8)isolation voltage: 2500V; (9)screw torque: 3/3N.m.

Features

MG150H1FL1 features: (1)high input impedance; (2)high speed: tf=0.5us(max.) , trr=0.5us(max.); (3)low saturation voltage: VCE(sat)=4.0V(max.); (4)enhancement-mode; (5)includes a complete half bridge in one package; (6)the electrodes are isolated from case.

Diagrams

MG150H1FL1 block diagram