(China (Mainland))
Product Summary
The MG100Q2YS51 is an N channel IGBT.
Parametrics
MG100Q2YS51 absolute maximum ratings: (1)Collector-Emitter Voltage, VCES: 1200 V; (2)Gate-Emitter Voltage, VGES: ±20 V; (3)Collector Current DC, IC (25℃/80℃): 150/100 A; (4)Forward Current DC, If: 100 A; (5)Collector Power Dissipation (Tc = 25℃), PC: 660 W; (6)Junction Temperature, Tj: 150℃; (7)Storage Temperature Range, Tstg: -40 to 125℃.
Features
MG100Q2YS51 features: (1)High Input Impedance; (2)High Speed : tf=0.3/μs (Max.)@Inductive Load Low Saturation Voltage : VCE (gat)=3.6V (Max.); (3)Enhancement-Mode; (4)Includes a Complete Half Bridge in One Package; (5)The Electrodes are Isolated from Case.
Diagrams
