(China (Mainland))
Product Summary
The MG100J7KS50 is an N channel IGBT.
Parametrics
MG100J7KS50 absolute maximum ratings: (1)Collector-emitter voltage, VCES: 600V; (2)Gate-emitter voltage, VGES: ±20V; (3)Collector current, DC, IC: 100A; 1ms, ICP: 200A; (4)Forward current, DC, IF: 100A; 1ms, IFM: 200A; (5)Collector power dissipation, PC: 300W; (6)Junction temperature, TJ: 150℃; (7)Storage temperature, Tstg: -40 to 125℃; (8)Isolation voltage, Visol: 2500V.
Features
MG100J7KS50 features: (1)The electrodes are isolated from case; (2)High input impedance; (3)7 IGBTs built into 1 package; (4)Enhancement-mode; (5)High speed type IGBT.
Diagrams
