Product Summary
The MBN400C20 is a Silicon N-channel IGBT.
Parametrics
MBN400C20 absolute maximum ratings: (1)Collector Emitter Voltage, VCES: 2,000V; (2)Gate Emitter Voltage, VGES: ±20V; (3)Collector Current, DC, IC: 400A; 1ms, ICp: 800A; (4)Forward Current, DC, IF: 400A; 1ms, IFM: 800A; (5)Collector Power Dissipation, Pc: 3,000W; (6)Junction Temperature, Tj: -40 to +125℃; (7)Storage Temperature, Tstg: -40 to +125℃; (8)Isolation Voltage, VISO: 4,000(AC 1 minute)VRMS.
Features
MBN400C20 features: (1)High thermal fatigue durability. (delta Tc=70℃, N>20,000cycles); (2)low noise due to built-in free-wheeling diode - ultra soft fast recovery diode(USFD); (3)High speed,low loss IGBT module; (4)Low driving power due to low input capacitance MOS gate; (5)High reliability,high durability module; (6)Isolated head sink (terminal to base).
Diagrams
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MBN400C20 |
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MBN400C20 |
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MBN400C33A |
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MBN400GR12 |
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MBN400GS12AW |
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