Product Summary

The MBN400C20 is a Silicon N-channel IGBT.

Parametrics

MBN400C20 absolute maximum ratings: (1)Collector Emitter Voltage, VCES: 2,000V; (2)Gate Emitter Voltage, VGES: ±20V; (3)Collector Current, DC, IC: 400A; 1ms, ICp: 800A; (4)Forward Current, DC, IF: 400A; 1ms, IFM: 800A; (5)Collector Power Dissipation, Pc: 3,000W; (6)Junction Temperature, Tj: -40 to +125℃; (7)Storage Temperature, Tstg: -40 to +125℃; (8)Isolation Voltage, VISO: 4,000(AC 1 minute)VRMS.

Features

MBN400C20 features: (1)High thermal fatigue durability. (delta Tc=70℃, N>20,000cycles); (2)low noise due to built-in free-wheeling diode - ultra soft fast recovery diode(USFD); (3)High speed,low loss IGBT module; (4)Low driving power due to low input capacitance MOS gate; (5)High reliability,high durability module; (6)Isolated head sink (terminal to base).

Diagrams

MBN400C20 block diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
MBN400C20
MBN400C20

Other


Data Sheet

Negotiable 
Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
MBN400C20
MBN400C20

Other


Data Sheet

Negotiable 
MBN400C33A
MBN400C33A

Other


Data Sheet

Negotiable 
MBN400GR12
MBN400GR12

Other


Data Sheet

Negotiable 
MBN400GS12AW
MBN400GS12AW

Other


Data Sheet

Negotiable