Product Summary

The MBN1200E33E is a Silicon N-channel IGBT.

Parametrics

MBN1200E33E absolute maximum ratings: (1)Collector Emitter Voltage, VCES: 3,300V; (2)Gate Emitter Voltage, VGES: ±20V; (3)Collector Current, DC, IC: 1,200A; 1ms, ICp: 2,400A; (4)Forward Current, DC, IF: 1,200A; 1ms, IFM: 2,400A; (5)Collector Power Dissipation, Pc: 12,000W; (6)Junction Temperature, Tj: -40 ~ +125℃; (7)Storage Temperature, Tstg: -40 ~ +125℃; (8)Isolation Voltage, VISO: 5,400(AC 1 minute)VRMS; (9)Screw Torque, Terminals(M4/M8): 2/10N·m; Mounting(M6): 6N·m.

Features

MBN1200E33E features: (1)High thermal fatigue durability (delta Tc=70℃,N>20,000cycles); (2)low noise due to built-in free-wheeling diode - ultra soft fast recovery diode(USFD); (3)High speed,low loss IGBT module; (4)Low driving power due to low input capacitance MOS gate; (5)High reliability,high durability module; (6)Isolated head sink (terminal to base).

Diagrams

MBN1200E33E block diagram