Product Summary

The MBN1200D25B is a silicon N-channel IGBT module.

Parametrics

MBN1200D25B absolute maximum ratings: (1)Collector Emitter Voltage, VCES: 2,500V; (2)Gate Emitter Voltage, VGES: ±20V; (3)Collector Current, DC, IC: 1,200A; (4)Collector Current, 1ms, ICp: 2,400A; (5)Forward Current, DC, IF: 1,200A; (6)Forward Current, 1ms, IFM: 2,400A; (7)Collector Power Dissipation, Pc: 12,000W; (8)Junction Temperature, Tj: -40 to +125℃; (9)Storage Temperature, Tstg: -40 to +125℃; (10)Isolation Voltage VISO, VRMS: 5,000(AC 1 minute); (11)Screw Torque, Terminals(M4/M8): 2/10N.m; (12)Screw Torque, Mounting: 6N.m.

Features

MBN1200D25B features: (1)High thermal fatigue durability; (2)low noise due to built-in free-wheeling diode - ultra soft fast recovery diode(USFD); (3)High speed,low loss IGBT module; (4)Low driving power due to low input capacitance MOS gate; (5)High reliability,high durability module; (6)Isolated head sink (terminal to base).

Diagrams

MBN1200D25B block diagram