Product Summary
The IXFN36N100 is a HiPerFET Power MOSFET Single MOSFET. The applications of the IXFN36N100 include DC-DC converters, Synchronous rectification, Battery chargers, Switched-mode and resonant-mode power supplies, DC choppers, Temperature and lighting controls, Low voltage relays.
Parametrics
IXFN36N100 absolute maximum ratings: (1)VDSS, TJ= 25℃ to 150℃: 1000 V; (2)VDGR, TJ= 25℃ to 150℃, RGS = 1MΩ: 1000 V; (3)VGS, Continuous: ±20 V; (4)VGSM, Transient: ±30 V; (5)ID25, TC= 25℃: 36A; (6)IL(RMS), Terminal (current limit): 144 A; (7)IDM, TC= 25℃: 144A; (8)IAR, TC= 25℃, 36A; (9)EAR TC = 25℃: 64 mJ; (10)EAS TC = 25: 4J; (11)dv/dt, IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS, TJ≤ 150℃, RG = 2 Ω: 5V/ns; (12)PD, TC = 25℃: 700 W.
Features
IXFN36N100 features: (1)International standard package; (2)Encapsulating epoxy meets UL 94 V-0, flammability classification; (3)miniBLOC with Aluminium nitride isolation; (4)Low RDS (on), HDMOSTM process; (5)Rugged polysilicon gate cell structure; (6)Unclamped Inductive Switching (UIS) rated; (7)Low package inductance; (8)Fast intrinsic Rectifier.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||
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IXFN36N100 |
Ixys |
MOSFET 1KV 36A |
Data Sheet |
Negotiable |
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Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||
IXFN 23N100 |
Other |
Data Sheet |
Negotiable |
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IXFN 24N100 |
Other |
Data Sheet |
Negotiable |
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IXFN 24N100F |
Other |
Data Sheet |
Negotiable |
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IXFN 25N80 |
Other |
Data Sheet |
Negotiable |
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IXFN 27N80 |
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Data Sheet |
Negotiable |
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IXFN 280N07 |
Other |
Data Sheet |
Negotiable |
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