Product Summary
The FS75R12KT3G is an IGBT-Module.
Parametrics
FS75R12KT3G absolute maximum ratings: (1)collector-emitter voltage: 1200V; (2)DC-collector current: 75A; (3)repetitive peak collector current: 150A; (4)total power dissipation: 355W; (5)gate-emitter peak voltage: ± 20V.
Features
FS75R12KT3G features: (1)Collector-emitter saturation voltage: 1.90V; (2)Gate threshold voltage: 5.0V to 6.5V; (3)Gate charge: 0.70μC; (4)Internal gate resistor: 10Ω; (5)Input capacitance: 5.30nF; (6)Reverse transfer capacitance: 0.20nF.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
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FS75R12KT3G |
Infineon Technologies |
IGBT Modules N-CH 1.2KV 100A |
Data Sheet |
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Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
FS75-8-5K3 |
Panduit |
Terminals Insulated Ferrules on Reels, single wire |
Data Sheet |
Negotiable |
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FS75-8-DSL3 |
Panduit |
Terminals 20 AWG ORANGE SOLD PER 50 PC STRIP |
Data Sheet |
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FS75R06KE3 |
Infineon Technologies |
IGBT Modules IGBT-MODULES 600V |
Data Sheet |
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FS75R12KE3 |
Infineon Technologies |
IGBT Modules 1200V 75A 3-PHASE |
Data Sheet |
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FS75R12KE3_B3 |
Infineon Technologies |
IGBT Modules N-CH 1.2KV 100A |
Data Sheet |
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FS75R12KE3G |
Infineon Technologies |
IGBT Modules 1200V 75A 3-PHASE |
Data Sheet |
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