Product Summary

The FM2G300US60E is an Insulated Gate Bipolar Transistor (IGBT) power module provides low conduction and switching losses as well as short circuit ruggedness. The FM2G300US60E is designed for applications such as motor control, uninterrupted power supplies (UPS) and general inverters where short circuit ruggedness is a required feature. The applications of the FM2G300US60E include AC & DC motor controls, General purpose inverters, Robotics, Servo controls, UPS.

Parametrics

FM2G300US60E absolute maximum ratings: (1)VCES, Collector-Emitter Voltage: 600 V; (2)VGES, Gate-Emitter Voltage: ± 20 V; (3)IC, Collector Current @ TC = 25℃: 300 A; (4)ICM (1), Pulsed Collector Current: 600 A; (5)IF, Diode Continuous Forward Current @ TC = 100℃: 300 A; (6)IFM, Diode Maximum Forward Current: 600 A; (7)TSC, Short Circuit Withstand Time @ TC = 100℃: 10 us; (8)PD, Maximum Power Dissipation @ TC = 25℃: 1250 W; (9)TJ, Operating Junction Temperature: -40 to +150℃; (10)Tstg, Storage Temperature Range: -40 to +125℃; (11)Viso, Isolation Voltage @ AC 1minute: 2500 V; (12)Mounting Torque, Power Terminals Screw: M5 2.0 N.m; Mounting Screw: M6 2.5 N.m.

Features

FM2G300US60E features: (1)UL Certified No. E209204; (2)Short circuit rated 10us @ TC = 100℃, VGE = 15V; (3)High speed switching; (4)Low saturation voltage: VCE(sat) = 2.2 V @ IC = 300A; (5)High input impedance; (6)Fast and soft anti-parallel FWD.

Diagrams

FM2G300US60E block diagram