Product Summary

The CM30TF12E is a powerex IGBTMOD module. It is designed for use in switching applications. Each module consists of six IGBT Transistors in a three phase bridge configuration, with each transistor having a reverseconnected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management.

Parametrics

CM30TF12E absolute maximum ratings: (1)Junction Temperature Tj: –40 to 150 ℃; (2)Storage Temperature Tstg: –40 to 125 ℃; (3)Collector-Emitter Voltage (G-E SHORT) VCES: 600 Volts; (4)Gate-Emitter Voltage VGES: ±20 Volts; (5)Collector Current IC: 30 Amperes; (6)Peak Collector Current ICM: 60 Amperes; (7)Diode Forward Current IF: 30 Amperes; (8)Diode Forward Surge Current IFM: 60Amperes; (9)Power Dissipation Pd: 150 Watts; (10)Max. Mounting Torque M5 Mounting Screws: 17 in-lb; (11)Module Weight (Typical): 260 Grams; (12)V Isolation VRMS: 2500 Volts.

Features

CM30TF12E features: (1)Low Drive Power; (2)Low VCE(sat); (3)Discrete Super-Fast Recovery (150ns) Free-Wheel Diode; (4)HigFrequency Operation (15-20kHz); (5)Isolated Baseplate for Easy Heat Sinking.

Diagrams

CM30TF12E block diagram