Product Summary

The CM150E3Y-24H is an IGBT Module designed for use in switching applications. The CM150E3Y-24H consists of two IGBTs in a half-bridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking base-plate, offering simplified system assembly and thermal management. The CM150E3Y-24H is designed for brake application.

Parametrics

CM150E3Y-24H absolute maximum ratigns: (1)Junction Temperature Tj:–40 to 150℃; (2)Storage Temperature Tstg: –40 to 125℃; (3)Collector-Emitter Voltage (G-E SHORT) VCES: 1200 Volts; (4)Gate-Emitter Voltage (C-E SHORT) VGES: ±20 Volts; (5)Collector Current (TC = 25℃) IC: 150 Amperes; (6)Peak Collector Current ICM: 300 Amperes; (7)Emitter Current (TC = 25℃) IE: 150 Amperes; (8)Peak Emitter Curren, IEM: 300 Amperes; (9)Maximum Collector Dissipation Pc: 890 Watts; (10)Mounting Torque, M5 Main Terminal: 3.5 to 4.5 Nm; (11)Mounting Torque, M6 Mounting : 3.5 to 4.5 Nm; (12)Weight: 400 Grams; (13)Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) Viso: 2500 Vrms.

Features

CM150E3Y-24H features: (1)Low Drive Power; (2)Low VCE(sat); (3)Discrete Super-Fast Recovery Free-Wheel Diode; (4)High Frequency Operation; (5)Isolated Baseplate for Easy Heat Sinking.

Diagrams

CM150E3Y-24H block diagram