Product Summary

The CM100E3U24F is a high power switching use insulated type module. Mitsubishi IGBT Module is designed for use in switching applications. Each module consists of two IGBTs in a half-bridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. The application of the CM100E3U24F includes Brake.

Parametrics

CM100E3U24F absolute maximum ratings: (1)Junction Temperature, Tj: -40 to 150℃; (2)Storage Temperature, Tstg: -40 to 125℃; (3)Collector-Emitter Voltage (G-E SHORT), VCES: 600 Volts; (4)Gate-Emitter Voltage (C-E SHORT), VGES: ±20 Volts; (5)Collector Current (TC = 25℃), IC: 100 A; (6)Peak Collector Current, ICM: 200 A; (7)Emitter Current (TC = 25℃), IE: 100 A; (8)Peak Emitter Current, IEM: 200 A; (9)Maximum Collector Dissipation (TC = 25℃, Tj ≤ 150℃), Pc: 400 Watts; (10)Mounting Torque, M5 Main Terminal: 2.5 ~ 3.5N · m; (11)Mounting Torque, M6 Mounting: 3.5 ~ 4.5 N · m; (12)Weight: 310 Grams; (13)Isolation Voltage (Main Terminal to Baseplate, AC 1 min.), Viso: 2500 Vrms.

Features

CM100E3U24F features: (1)Low Drive Power; (2)Low VCE(sat); (3)Discrete Super-Fast Recovery Free-Wheel Diode; (4)High Frequency Operation; (5)Isolated Baseplate for Easy Heat Sinking.

Diagrams

CM100E3U24F block diagram