Product Summary

The BSM15GD120DN2E3224 is an IGBT Power Module.

Parametrics

BSM15GD120DN2E3224 absolute maximum ratings: (1)Collector-emitter voltage, VCE: 1200 V; (2)Collector-gate voltage, VCGR: 1200V; (3)Gate-emitter voltage, VGE: ±20V; (4)DC collector current, TC = 25℃, IC: 15A; TC = 80℃, IC: 25A; (5)Pulsed collector current, tp = 1 ms, TC = 25℃, ICpuls: 30A; TC = 80℃, ICpuls: 50A; (6)Power dissipation per IGBT, TC = 25℃, Ptot: 145W; (7)Chip temperature, Tj: + 150℃; (8)Storage temperature, Tstg: -40 to + 125℃.

Features

BSM15GD120DN2E3224 features: (1)Power module; (2)3-phase full-bridge; (3)Including fast free-wheel diodes; (4)Package with insulated metal base plate.

Diagrams

BSM15GD120DN2E3224 block diagram

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