(China (Mainland))
Product Summary
The BSM10GD60DN2 is an IGBT Power Module.
Parametrics
BSM10GD60DN2 absolute maximum ratings: (1)Collector-emitter voltage, VCE: 600 V; (2)Collector-gate voltage, RGE = 20 kΩ, VCGR: 600V; (3)Gate-emitter voltage, VGE: ±20V; (4)DC collector current, TC = 40℃, IC: 10A; (5)Pulsed collector current, tp = 1 ms, TC = 40℃, ICpuls: 20A; (6)Power dissipation per IGBT, TC = 25℃, Ptot: 35W; (7)Chip temperature, Tj: +125℃; (8)Storage temperature, Tstg: -55 to +150℃.
Features
BSM10GD60DN2 features: (1)Power module; (2)3-phase full-bridge; (3)Including fast free-wheel diodes; (4)Package with insulated metal base plate.
Diagrams
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 BSM10GD60DN2 |
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Negotiable |
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BSM100GAL120DN2 |
Infineon Technologies |
IGBT Modules 1200V 100A CHOPPER |
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Negotiable |
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Data Sheet |
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Data Sheet |
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BSM100GB120DN2 |
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IGBT Modules 1200V 100A DUAL |
Data Sheet |
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