Product Summary
The BSM100GB170DLC is an IGBT Module.
Parametrics
BSM100GB170DLC absolute maximum ratings: (1)collector-emitter voltage VCES: 1700 V; (2)DC-collector current Tc= 80℃ IC,nom: 100 A; (3)DC-collector current Tc= 25℃ IC: 200 A; (4)repetitive peak collector current tP= 1ms, Tc= 70℃ ICRM: 200 A; (5)total power dissipation Tc= 25℃, Transistor Ptot: 960 W; (6)gate-emitter peak voltage VGES: +/- 20 V; (7)DC forward current IF: 100 A; (8)repetitive peak forw. current tP= 1ms IFRM: 200 A; (9)I2t - value, Diode VR= 0V, tp= 10ms, Tvj= 125℃ I2t: 2800 A2s; (10)insulation test voltage RMS, f= 50Hz, t= 1min VISOL: 2,5 kV.
Features
BSM100GB170DLC features: (1)Kollektor-Emitter IC= 100A, VGE= 15V, Tvj= 25℃ VCE sat: 1,95V typ 2,45 V max; (2)collector-emitter saturation voltage IC= 100A, VGE= 15V, Tvj= 125℃ VCE sat: 2,20 V; (3)Gate-Schwellenspannung gate threshold voltage IC= 1,5mA, VCE= VGE, Tvj= 25℃ 4,5 to 6,5 V 5,5 V typ; (4)Kollektor-Emitter Reststrom VCE= 600V, VGE= 0V, Tvj= 25℃ ICES: 1μA typ 500 μA max; (5)collector-emitter cut-off current VCE= 600V, VGE= 0V, Tvj= 125℃: 1mA; (6)Gate-Emitter Reststrom gate-emitter leakage current VCE= 0V, VGE= 20V, Tvj= 25℃ IGES: 400 nA.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
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BSM100GB170DLC |
Infineon Technologies |
IGBT Modules 1700V 100A DUAL |
Data Sheet |
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Image | Part No | Mfg | Description | Pricing (USD) |
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BSM100GAL120DLCK |
Infineon Technologies |
IGBT Modules 1200V 100A CHOPPER |
Data Sheet |
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BSM100GAL120DN2 |
Infineon Technologies |
IGBT Modules 1200V 100A CHOPPER |
Data Sheet |
Negotiable |
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BSM100GAR120DN2 |
Infineon Technologies |
IGBT Transistors 1200V 100A DUAL |
Data Sheet |
Negotiable |
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BSM100GB120DLC |
Infineon Technologies |
IGBT Modules 1200V 100A DUAL |
Data Sheet |
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BSM100GB120DLCK |
Infineon Technologies |
IGBT Modules 1200V 100A DUAL |
Data Sheet |
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BSM100GB120DN2 |
Infineon Technologies |
IGBT Modules 1200V 100A DUAL |
Data Sheet |
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