S29GL128P90TFIR2

128 Megabit, 3.0 Volt-only Page Mode Flash Memory, TSSOP, 90 nm MirrorBit Process Technology

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Price:: US $7.58~9.56 / piece [Get Latest Price]

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PartNumber:: S29GL128P90TFIR2

Brand:: SPANSION - spansion | Pack: TSSOP | D/C: 08+

Availability:: Supply Ability: 10000/Week Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

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Products Upload time: 2012-08-22

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Product Summary

The S29GL128P90TFIR20 is a Mirrorbit Flash product fabricated on 90 nm process technology. The S29GL128P90TFIR20 offers a fast page access time of 25 ns with a corresponding random access time as fast as 90 ns. The S29GL128P90TFIR20 features a Write Buffer that allows a maximum of 32 words/64 bytes to be programmed in one operation, resulting in faster effective programming time than standard programming algorithms. This makes the S29GL128P90TFIR20 ideal for today’s embedded applications that require higher density, better performance and lower power consumption.

Parametrics

S29GL128P90TFIR20 absolute maximum ratings: (1)Storage Temperature, Plastic Packages: –65 to +150℃; (2)Ambient Temperature with Power Applied: –65 to +125℃; (3)Voltage with Respect to Ground, All Inputs and I/Os except as noted below:–0.5 V to VCC + 0.5 V; VCC: –0.5 V to +4.0 V; VIO: –0.5V to +4.0V; A9 and ACC: –0.5 V to +12.5 V; (4)Output Short Circuit Current: 200 mA.

Features

S29GL128P90TFIR20 features: (1)Single 3V read/program/erase (2.7-3.6 V); (2)Enhanced VersatileI/O control: All input levels (address, control, and DQ input levels) and outputs are determined by voltage on VIO input. VIO range is 1.65 to VCC; (3)90 nm MirrorBit process technology; (4)8-word/16-byte page read buffer; (5)32-word/64-byte write buffer reduces overall programming time for multiple-word updates; (6)Secured Silicon Sector region: 128-word/256-byte sector for permanent, secure identification through an 8-word/16-byte random Electronic Serial Number; Can be programmed and locked at the factory or by the customer; (7)Uniform 64Kword/128KByte Sector Architecture; (8)100,000 erase cycles per sector typical; (9)20-year data retention typical.