(China (Mainland))
Product Summary
The RJK5020 is a Silicon N Channel MOS FET.
Parametrics
RJK5020 absolute maximum ratings: (1)Drain to source voltage, VDSS: 500 V; (2)Gate to source voltage, VGSS: ±30 V; (3)Drain current, ID: 40 A; (4)Drain peak current, ID (pulse): 120 A; (5)Body-drain diode reverse drain current, IDR: 40 A; (6)Body-drain diode reverse drain peak current, IDR (pulse): 120 A ; (7)Avalanche current, IAP: 12.5 A; (8)Avalanche energy, EAR: 8.6 mJ ; (9)Channel dissipation, Pch: 200 W ; (10)Channel to case thermal impedance, θch-c: 0.625℃/W ; (11)Channel temperature, Tch: 150℃; (12)Storage temperature Tstg: –55 to +150℃.
Features
RJK5020 features: (1)Low on-resistance; (2)Low leakage current; (3)High speed switching.
Diagrams
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 RJK5033DPD-00#J2 |
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MOSFET N-CH 500V 6A MP3A |
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RJK5012DPP |
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Data Sheet |
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