(China (Mainland))
Product Summary
The K2225 is a Silicon N Channel MOS FET.
Parametrics
K2225 absolute maximum ratings: (1)Drain to source voltage VDSS: 1500 V; (2)Gate to source voltage VGSS: ±20 V; (3)Drain current ID: 2 A; (4)Drain peak current ID(pulse): 7 A; (5)Body–drain diode reverse drain current IDR: 2 A; (6)Channel dissipation Pch: 50 W; (7)Channel temperature Tch: 150 ℃; (8)Storage temperature Tstg –55 to +150 ℃.
Features
K2225 features: (1)High breakdown voltage (VDSS = 1500 V); (2)High speed switching; (3)Low drive current; (4)No Secondary Breakdown; (5)Suitable for Switching regulator, DC-DC converter.
Diagrams
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 K222M15X7RF53H5 |
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CAP CER 2200PF 50V X7R RADIAL |
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K222M10X7RH53H5 |
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CAP CER 2200PF 100V X7R RADIAL |
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K222M10X7RH53L2 |
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CAP CER 2200PF 100V X7R RADIAL |
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K222M10X7RH5TH5 |
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CAP CER 2200PF 100V X7R RADIAL |
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K222M10X7RH5TL2 |
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CAP CER 2200PF 100V X7R RADIAL |
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K222M10X7RH5UH5 |
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CAP CER 2200PF 100V X7R RADIAL |
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