Product Summary

The HYB18L256169BF-7.5 is a high-speed CMOS, dynamic random-access memory containing 268,435,456 bits. It is internally configured as a quad-bank DRAM. The HYB18L256169BF-7.5 achieves high speed data transfer rates by employing a chip architecture that prefetches multiple bits and then synchronizes the output data to the system clock. Read and write accesses are burst-oriented; accesses start at a selected location and continue for a programmed number of locations (1, 2, 4, 8 or full page) in a programmed sequence. The HYB18L256169BF-7.5 operation is fully synchronous: all inputs are registered at the positive edge of CLK.

Parametrics

HYB18L256169BF-7.5 absolute maximum ratings: (1)Power Supply Voltage VDD: -0.3 to 2.7 V; (2)Power Supply Voltage for Output Buffer VDDQ: -0.3 to 2.7 V; (3)Input Voltage VIN: -0.3 to VDDQ + 0.3 V; (4)Output Voltage VOUT: -0.3 to VDDQ + 0.3 V; (5)Operation Case Temperature Commercial TC: 0 to + 70 ℃; (6)Storage Temperature TSTG: -55 to +150 ℃; (7)Power Dissipation PD: 0.7 W; (8)Short Circuit Output Current IOUT: 50 mA.

Features

HYB18L256169BF-7.5 features: (1)4 banks × 4 Mbit × 16 organization; (2)Fully synchronous to positive clock edge; (3)Four internal banks for concurrent operation; (4)Programmable CAS latency: 2, 3; (5)Programmable burst length: 1, 2, 4, 8 or full page; (6)Programmable wrap sequence: sequential or interleaved; (7)Programmable drive strength; (8)Auto refresh and self refresh modes; (9)8192 refresh cycles / 64 ms; (10)Auto precharge; (11)Commercial (0℃ to +70℃) and Extended (-25℃ to +85℃) operating temperature range; (12)54-ball PG-VFBGA package (11.0 × 8.0 × 1.0 mm); (13)RoHS Compliant Product.

Diagrams

HYB18L256169BF-7.5 block diaram

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HYB18L256169BF-7.5
HYB18L256169BF-7.5

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