Product Summary

The FGL60N100BNTD is a Trench insulated gate bipolar transistor (IGBT) with NPT technology show outstanding performance in conduction and switching characteristics as well as enhanced avalanche ruggedness. The FGL60N100BNTD is well suited for Induction Heating ( I-H ) applications. It is used in Micro- Wave Oven, I-H Cooker, I-H Jar, Induction Heater, Home Appliance.

Parametrics

FGL60N100BNTD absolute maximum ratings: (1)VCES Collector-Emitter Voltage: 1000 V; (2)VGES Gate-Emitter Voltage: ±25 V; (3)IC Collector Current @ TC = 25℃: 60 A; Collector Current @ TC = 100℃: 42 A; (4)ICM Pulsed Collector Current: 120 A; (5)IF Diode Continuous Forward Current @ TC = 100℃: 15 A; (6)PD Maximum Power Dissipation @ TC = 25℃: 180 W; Maximum Power Dissipation @ TC = 100℃: 72 W; (7)TJ Operating Junction Temperature: -55 to +150 ℃; (8)Tstg Storage Temperature Range: -55 to +150 ℃; (9)TL Maximum Lead Temp. for soldering Purposes, 1/8 from case for 5 seconds: 300 ℃.

Features

FGL60N100BNTD features: (1)High Speed Switching; (2)Low Saturation Voltage: VCE(sat) = 2.5 V @ IC = 60A; (3)High Input Impedance; (4)Built-in Fast Recovery Diode.

Diagrams

FGL60N100BNTD block diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
FGL60N100BNTD
FGL60N100BNTD
Fairchild Semiconductor
IGBT Transistors HIGH_POWER
Data Sheet
0-1: $3.44
1-25: $3.10
25-100: $2.82
100-250: $2.54
FGL60N100BNTDTU
FGL60N100BNTDTU
Fairchild Semiconductor
IGBT Transistors HIGH_POWER
Data Sheet
0-185: $2.82
185-250: $2.54
250-500: $2.29
500-1000: $1.93