(China (Mainland))
Product Summary
The C5198 is a silicon NPN triple diffused type transistor for power amplifier applications.
Parametrics
C5198 absolute maximum ratings: (1)Collector-base voltage VCBO: 140 V; (2)Collector-emitter voltage VCEO: 140 V; (3)Emitter-base voltage VEBO: 5 V; (4)Collector current IC: 10 A; (5)Base current IB: 1 A; (6)Collector power dissipation(Tc = 25℃): 100 W; (7)Junction temperature Tj: 150 ℃; (8)Storage temperature range Tstg: -55 to 150℃.
Features
C5198 features: (1)High breakdown voltage: VCEO = 140 V (min); (2)Complementary to 2SA1941; (3)Suitable for use in 70-W high fidelity audio amplifier output stage.
Diagrams
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C519 |
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C51949-000 |
TE Connectivity |
Wire Identification HX-SCE-1K-25.4-50-S1-4 |
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C5198 |
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