Product Summary
The APT5025AN is an N-channel enhancement mode high voltage power MOSFET.
Parametrics
APT5025AN absolute maximum ratings: (1)VDSS, Drain-source voltage: 500V; (2)ID, continuous drain current: 20A; (3)IDM, pulsed drain current: ±30V; (4)PD, total power dissipation: 230W; (5)Tj, Tstg, operating and storage junction temperature range: -55 to 150℃.
Features
APT5025AN features: (1)IS, continuous source current: 20A; (2)ISM, pulse source current: 80A; (3)VSD, diode forward voltage: 1.3V; (4)trr, reverse recovery time: 160ns; (5)Qrr, reverse recovery charge: 2.7μC.
Diagrams
APT5010B2FLL |
Other |
Data Sheet |
Negotiable |
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APT5010B2FLLG |
MOSFET N-CH 500V 46A T-MAX |
Data Sheet |
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APT5010B2LL |
Other |
Data Sheet |
Negotiable |
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APT5010B2LLG |
MOSFET N-CH 500V 46A T-MAX |
Data Sheet |
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APT5010B2VFR |
Other |
Data Sheet |
Negotiable |
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APT5010B2VFRG |
MOSFET N-CH 500V 47A T-MAX |
Data Sheet |
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