Product Summary

The QM30DY2H is a Mitsubishi transistor module. The applications of the QM30DY2H are: Inverters, Servo drives, UPS, DC motor controllers, NC equipment, Welders.

Parametrics

QM30DY2H absolute maximum ratings: (1)VCEX (SUS) Collector-emitter voltage IC=1A, VEB=2V: 600V; (2)VCEX Collector-emitter voltage VEB=2V: 600V; (3)VCBO Collector-base voltage: 600V; (4)VEBO Emitter-base voltage: 7V; (5)IC Collector current: 30A; (6)–IC Collector reverse current: DC(forward diode current): 30A; (7)PC Collector dissipation TC=25℃: 250W; (8)IB Base current DC: 1.8A; (9)–ICSM Surge collector reverse current(forward diode current): 300A; (10)Tj Junction temperature: –40~+150 ℃; (11)Tstg Storage temperature: –40~+125 ℃; (12)Viso Isolation voltage: 2500V.

Features

QM30DY2H features: (1)IC Collector current: 30A; (2)VCEX Collector-emitter voltage: 600V; (3)hFE DC current gain: 75; (4)Insulated Type; (5)UL Recognized.

Diagrams

QM30DY2H block diagram