(China (Mainland))
Product Summary
The MG50J1BS11 is an N channel IGBT.
Parametrics
MG50J1BS11 absolute maximum ratings: (1)collector-emitter voltage: 600V; (2)gate-emitter voltage: ±20V; (3)collector current: DC: 50A, 1ms: 100A; (4)forward current: DC: 50A, 1ms: 100A; (5)collector power dissipation: 150W; (6)junction temperature: 150℃; (7)storage temperature range: -40℃ to +125℃; (8)isolation voltage: 2500V; (9)screw torque: 2/3N.m.
Features
MG50J1BS11 features: (1)high input impedance; (2)high speed: tf=1.0us(max.); (3)low saturation voltage: VCE(sat)=2.7V(max.); (4)enhancement-mode; (5)the electrodes are isolated from case.
Diagrams
